IndiumV3, Main, Repository, bibRecord, 001A41

Improved Electrical Conductivity of Graphene Films Integrated with Metal Nanowires

Identifieur interne : 001A41 ( Main/Repository ); précédent : 001A40; suivant : 001A42

Improved Electrical Conductivity of Graphene Films Integrated with Metal Nanowires

Auteurs : RBID : Pascal:13-0003026

Descripteurs français

Pascal (Inist)
- Conductivité électrique, Graphène, Couche mince, Nanofil, Nanomatériau, Dépôt chimique phase vapeur, Disruption, Propriété transport, Porteur charge, Résistivité couche, Oxyde d'indium, Oxyde d'étain, Dispositif électrochromique, Dispositif optoélectronique, Polycristal, Substrat métal, 7363, 8105U, 8107V, 8107B.

English descriptors

KwdEn :
- Breakdown, CVD, Charge carriers, Electrical conductivity, Electrochromic devices, Graphene, Indium oxide, Nanostructured materials, Nanowires, Optoelectronic devices, Polycrystals, Sheet resistivity, Thin films, Tin oxide, Transport properties.

Abstract

Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found that graphene assembled with metal nanowires (NWs) dramatically decreases the resistance of graphene films. Graphene/ NW films with a sheet resistance comparable to that of the intrinsic resistance of graphene have been obtained and tested as a transparent electrode replacing indium tin oxide films in electrochromic (EC) devices. The successful integration of such graphene/NW films into EC devices demonstrates their potential for a wide range of optoelectronic device applications.

Links toward previous steps (curation, corpus...)

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Pascal:13-0003026

Le document en format XML

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<author><name>LI LI ZHANG</name>
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<author><name sortKey="Ruoff, Rodney S" uniqKey="Ruoff R">Rodney S. Ruoff</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, 1 University Station C2200</s1>
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<seriesStmt><idno type="ISSN">1530-6984</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Breakdown</term>
<term>CVD</term>
<term>Charge carriers</term>
<term>Electrical conductivity</term>
<term>Electrochromic devices</term>
<term>Graphene</term>
<term>Indium oxide</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Optoelectronic devices</term>
<term>Polycrystals</term>
<term>Sheet resistivity</term>
<term>Thin films</term>
<term>Tin oxide</term>
<term>Transport properties</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Conductivité électrique</term>
<term>Graphène</term>
<term>Couche mince</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Dépôt chimique phase vapeur</term>
<term>Disruption</term>
<term>Propriété transport</term>
<term>Porteur charge</term>
<term>Résistivité couche</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Dispositif électrochromique</term>
<term>Dispositif optoélectronique</term>
<term>Polycristal</term>
<term>Substrat métal</term>
<term>7363</term>
<term>8105U</term>
<term>8107V</term>
<term>8107B</term>
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<front><div type="abstract" xml:lang="en">Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found that graphene assembled with metal nanowires (NWs) dramatically decreases the resistance of graphene films. Graphene/ NW films with a sheet resistance comparable to that of the intrinsic resistance of graphene have been obtained and tested as a transparent electrode replacing indium tin oxide films in electrochromic (EC) devices. The successful integration of such graphene/NW films into EC devices demonstrates their potential for a wide range of optoelectronic device applications.</div>
</front>
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<fA06><s2>11</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Improved Electrical Conductivity of Graphene Films Integrated with Metal Nanowires</s1>
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<fA11 i1="01" i2="1"><s1>KHOLMANOV (Iskandar N.)</s1>
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<fA11 i1="02" i2="1"><s1>MAGNUSON (Carl W.)</s1>
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<fA11 i1="03" i2="1"><s1>ALIEV (Ali E.)</s1>
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<fA11 i1="04" i2="1"><s1>HUIFENG LI</s1>
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<fA11 i1="05" i2="1"><s1>BIN ZHANG</s1>
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<fA11 i1="06" i2="1"><s1>JI WON SUK</s1>
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<fA11 i1="07" i2="1"><s1>LI LI ZHANG</s1>
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<fA11 i1="08" i2="1"><s1>PENG (Eric)</s1>
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<fA11 i1="09" i2="1"><s1>HOSSEIN MOUSAVI (S.)</s1>
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<fA11 i1="10" i2="1"><s1>KHANIKAEV (Alexander B.)</s1>
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<fA11 i1="12" i2="1"><s1>SHVETS (Gennady)</s1>
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<fA11 i1="13" i2="1"><s1>RUOFF (Rodney S.)</s1>
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<fA14 i1="01"><s1>Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, 1 University Station C2200</s1>
<s2>Austin, Texas 78712</s2>
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<fA14 i1="02"><s1>CNR-IDASC Sensor Lab Department of Chemistry and Physics, University of Brescia, via Valotti, 9</s1>
<s2>Brescia 25133</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
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<fA14 i1="03"><s1>Alan G. MacDiarmid NanoTech Institute, University of Texas at Dallas</s1>
<s2>Richardson, Texas 75083</s2>
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<fA14 i1="04"><s1>Department of Physics and Center for Nano and Molecular Science and Technology, The University of Texas at Austin</s1>
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<s3>USA</s3>
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<fC01 i1="01" l="ENG"><s0>Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found that graphene assembled with metal nanowires (NWs) dramatically decreases the resistance of graphene films. Graphene/ NW films with a sheet resistance comparable to that of the intrinsic resistance of graphene have been obtained and tested as a transparent electrode replacing indium tin oxide films in electrochromic (EC) devices. The successful integration of such graphene/NW films into EC devices demonstrates their potential for a wide range of optoelectronic device applications.</s0>
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<s5>04</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>09</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Charge carriers</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Résistivité couche</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Sheet resistivity</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Dispositif électrochromique</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Electrochromic devices</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Dispositif optoélectronique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Optoelectronic devices</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Polycristal</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Polycrystals</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Substrat métal</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>7363</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>8105U</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>007</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Improved Electrical Conductivity of Graphene Films Integrated with Metal Nanowires

Improved Electrical Conductivity of Graphene Films Integrated with Metal Nanowires

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